Spin transport through GaAs/GaMnAs/GaAs

This work addresses spin-dependent transport in the heterostructure p-GaAs/GaMnAs/p-GaAs. The diluted ferromagnetic semiconductor GaMnAs layer behaves, within mean field approximation, as a potential well for spin-down carriers and a potential barrier for spin-up ones. Thus the transport would be spin-dependent. The goal of this work is to devise spin filters relevant for spin-dependent optoelectronics. A spin polarized transmission is obtained. An oscillatory behavior of transmission coefficient is shown and explained by quantum resonance. Our results indicate that the transmission and the polarization can be tuned by tuning the incident energy.